| Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas. P. Vanraes, S. P. Venugopalan and A. Bogaerts Appl. Phys. Rev., 8, 041305 (2021) (article selected by the editors as Featured Article, as one of the journal's best articles) Copyright (2021) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. Following article appeared in Applied Physics Letters and may be found at: https://aip.scitation.org/doi/10.1063/5.0058904 |
| Atomic scale simulation of carbon nanotube nucleation from hydrocarbon precursors. |
| Kinetics of energy selective Cs encapsulation in single-walled carbon nanotubes for damage-free and position-selective doping. |
| Self-limiting oxidation in small-diameter Si nanowires. |
| Changing chirality during single-walled carbon nanotube growth: a reactive molecular dynamics/Monte Carlo study. |
| Simultaneous etching and deposition processes during the etching of silicon with a Cl2/O2/Ar inductively coupled plasma. |
| Catalyzed growth of carbon nanotube with definable chirality by hydrid molecular dynamics – force biased Monte Carlo simulations. |