Detailed Characterization of Endohedral Doping of Carbon Nanotubes for Nanoelectronics Applications. 01/11/2024 - 31/10/2025

Abstract

Single-walled carbon nanotubes (SWCNTs) exhibit diameter-dependent optoelectronic properties, making them promising candidates for advanced nanoelectronics applications. Their unique one-dimensional hollow structure, coupled with high carrier mobility, photochemical stability, and notable thermal transport properties, positions them as compelling alternatives to current materials in applications such as transparent conductive films and field-effect transistors for sensing at the nanoscale. This project aims to leverage the hollow architecture of SWCNTs by filling them with electron donor or acceptor molecules to create n- and p-doped semiconducting SWCNTs.

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Project type(s)

  • Research Project