Abstract
Single-walled carbon nanotubes (SWCNTs) exhibit diameter-dependent optoelectronic properties, making them promising candidates for advanced nanoelectronics applications. Their unique one-dimensional hollow structure, coupled with high carrier mobility, photochemical stability, and notable thermal transport properties, positions them as compelling alternatives to current materials in applications such as transparent conductive films and field-effect transistors for sensing at the nanoscale. This project aims to leverage the hollow architecture of SWCNTs by filling them with electron donor or acceptor molecules to create n- and p-doped semiconducting SWCNTs.
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