Nanogestructureerde en Organische Optische en Elektronische Materialen

Point Defects in Wide-Bandgap Materials

Point Defects in Wide-Bandgap Materials


The microscopic structure, formation and decay, as well as electronic and vibrational properties of point defects, are investigated by EPR and optical methods in a range of systems. Starting from the alkali halides as model systems, this study has been extended to other ionic crystals such as the rare-earth halides and ternary compounds. We are also involved in the study of superhard materials such as diamond and cubic boron nitride (c-BN), which are now in the center of attention as promising wide-bandgap opto-electronic materials.[1][2]

References

  1. Vlasov II, Ralchenko VG, Goovaerts E., 2002.  Laser-induced transformation of 3H defects in diamond. Physica Status Solidi a-Applied Research. 193:489-493.
  2. Nistor SV, Stefan M, Goovaerts E, Bouwen A, Schoemaker D, Dinca G., 2001.  Point defects in cubic boron nitride crystals. Diamond and Related Materials. 10:1408-1411.